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Faculty details

Prof.Jeevesh Kumar

Designation: Assistant Professor

Department: Electronics Engineering

Email: jeevesh[at]iitism[dot]ac[dot]in

Contact Number: 8884742131

Office Number: +91-326-223-03262235457

Personal Page: Under Construction

About Me: Dr. Jeevesh Kumar, an Assistant Professor at the Electronics Engineering Department of IIT(ISM) Dhanbad, completed his Bachelor’s education (BTech) from the National Institute of Technology, Tiruchirappalli, in electronics and communication (ECE) engineering followed by worked as an ASIC digital design engineer in Synopsys, Bangalore, India, for three years. Moving forward, Jeevesh joined as a direct Ph.D. student at the Indian Institute of Science (IISc), Bangalore, India. In his Ph.D. (with MTech Research), he worked under the supervision of Prof. Mayank Shrivastava and investigated 2D material-based nanoelectronics devices. Jeevesh’s key research contributions include atomic-level investigations of 2D materials, especially graphene, phosphorene, and transition metal dichalcogenides (TMDs), to address their technological roadblocks and reliability challenges. In computational investigations, he used QuantumATK tools for the density functional theory (DFT) and molecular dynamic (MD) simulations to explore the materials’ fundamental properties and contact interfaces. Based on the theoretical finding, he further explored and engineered different materials and their devices using an integrated electrical and optical characterization system. Jeevesh’s key findings consist proposal of direct bandgap opening in graphene by creating hydrogenated or fluorinated vacancy patterns, and defect-assistance contact resistance engineering of graphene’s and TMDs’ FETs. He further explored phosphorene’s ambient degradation dynamics and degradation stakeholders of the material and devices. He also investigated the thermal evolution of different Raman characteristics of the material. Besides, Jeevesh worked on the ambient reliability issues of the graphene and TMDs along with their device performance improvement for electronic applications. He published more than 35 publications in internal journals and conferences. His technical skill set includes computational skills like DFT and MD using QuantumATK and VASP, characterization skills like Electrical (DC & pulse), optical (Raman & PL), material (AFM & XPS), and thermal characterization, and 2D material device processing using standard lift-off process flow. His present research interest includes 2D Materials, Emerging Electronic Devices, Atomistic Simulation, Device Fabrication, material & Device characterizations, and Electronics for UAV applications.

Research Interest: 2D Materials, Emerging Electronic Devices, Atomistic Simulation, Device Fabrication, material & Device characterizations, Electronics for UAV

Curriculum
Vitae
Publications

Teaching

ECD413: Microelectronics Technology

ECC203: Digital Circuit and System Design

ECD405: Degital System Design Using HDL

ECE201: Measurments and Instrumentation

 

Academics

BTech: ECE, NIT Tiruchirappalli

PhD & MTech Res.: DESE, IISc Bangalore

 

Position

S.  No.

Organization

Designation

From(Date)

To (Date)

1

IIT(ISM), Dhanbad

Assistant Professor

Nov, 2023

Present

2

IISc, Bangalore

Research Associate

June, 2022

Oct, 2023

3

Synopsys India, Pvt. Ltd.

ASIC Digital Design Engineer

June, 2013

June, 2016

Awards and Honors

Received the prestigious "Tag Corporation Medal" for the best PhD Thesis, Convocation 2024, IISc Bangalore

 

Publications

List Of Research Publications (only in Peer-reviewed Journals)

  1. Patbhaje, Utpreksh, Rupali Verma, Jeevesh Kumar, Rajarshi Roy Chaudhuri, and Mayank Shrivastava. "Discovery of dynamic nature of 0D potential wells and potential walls in 2D TMD device systems." npj 2D Materials and Applications (2025). DOI: 10.1038/s41699-025-00641-6
  2. Patbhaje, Utpreksh, Rupali Verma, Jeevesh Kumar, A. Ansh, and Mayank Shrivastava. "Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs." npj 2D Materials and Applications 9, no. 1 (2025): 71. DOI: 10.1038/s41699-025-00564-2 (SCI)
  3. Rai, Anand Kumar, Asif A. Shah, Aadil Bashir Dar, Jeevesh Kumar, and Mayank Shrivastava. "Reconfiguration of Intrinsic Depletion‐Mode Characteristics of MoS2 Field‐Effect Transistors to High‐Performance Enhancement‐Mode Operation Using an Argon Plasma‐Induced p‐Type Doping Technique." Small Methods (2024): 2401001. DOI: 10.1002/smtd.202401001
  4. Rai, Anand Kumar, Asif A. Shah, Jeevesh Kumar, Sumana Chattaraj, Aadil Bashir Dar, Utpreksh Patbhaje, and Mayank Shrivastava. "MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation." ACS nano (2024). DOI: 10.1021/acsnano.3c09428
  5. Hemanjaneyulu, Kuruva, Jeevesh Kumar, Utpreksh Patbhaje, and Mayank Shrivastava. "Enhanced Carrier Injection Across S/D Contacts in Selenium Based TMD FETs Using KI & Metal Induced Gap-States Engineering." IEEE Journal of the Electron Devices Society (2024). DOI: 10.1109/JEDS.2023.3345020
  6. Shah, Asif A., Jeevesh Kumar, Aadil Bashir Dar, and Mayank Shrivastava. "Unveiling the Interfacial Behavior of Au Contacted MoS2 Atomristor and the Role of Point Defects." IEEE Transactions on Electron Devices, 70, no. 12 (2023): 6622-6629. DOI: 10.1109/TED.2023.3325800
  7. Jeevesh Kumar, and Mayank Shrivastava. “Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications on Metal-TMDs’ Interface Chemistry", ACS omega 8, no. 11 (2023): 10176-10184. DOI: 10.1021/acsomega.2c07489
  8. Adil Meersha, Jeevesh Kumar, Abhishek Mishra, Harsha B. Variar, and Mayank Shrivastava, "Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices", IEEE Electron Device Letters 44, no. 4 (2023): 666-669. DOI: 10.1109/LED.2023.3250329
  9. Ansh, Utpreksh Patbhaje, Jeevesh Kumar, Adil Meersha, and Mayank Shrivastava. "Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition." Communications Materials 4, no. 1 (2023): 8. DOI: 10.1038/s43246-023-00333-y
  10. Meersha, Adil, Jeevesh Kumar, Abhishek Mishra, Harsha B. Variar, and Mayank Shrivastava. "Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices." IEEE Electron Device Letters 44, no. 4 (2023): 666-669. DOI: 10.1109/LED.2023.3250329
  11. Jeevesh Kumar, Adil Meersha, Harsha B. Variar, Abhishek Mishra, and Mayank Shrivastava.“Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs.”, IEEE Transactions on Electron Devices 69, no. 4 (2022): 2066-2073. DOI: 10.1109/TED.2022.3151033
  12. Jeevesh Kumar, and Mayank Shrivastava. “First-Principles Molecular Dynamics Insight into the Atomic Level Degradation Pathway of Phosphorene.” ACS omega 7, no. 1 (2022): 696-704. DOI: 10.1021/acsomega.1c05353
  13. Jeevesh Kumar, Utpreksh Patbhaje, and Mayank Shrivastava. “Role of Channel Inversion in Ambient Degradation of Phosphorene FETs”, IEEE Transactions on Electron Devices 69, no. 6 (2022): 3353-3358. DOI: 10.1109/TED.2022.3171504
  14. Jeevesh Kumar, Utpreksh Patbhaje, and Mayank Shrivastava. “Breathing Mode’s Temperature Coefficient Estimation and Interlayer Phonon Scattering Model of Few-layer Phosphorene”, ACS omega 7, no. 48 (2022): 43462-43467. DOI: 10.1021/acsomega.2c03759
  15. Hemanjaneyulu, Kuruva, Jeevesh Kumar, and Mayank Shrivastava. "Gaps in the Y-Function Method For Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs." IEEE Electron Device Letters 43, no. 4 (2022): 635-638. DOI: 10.1109/LED.2022.3149410
  16. Hemanjaneyulu, Kuruva, Adil Meersha, Jeevesh Kumar, and Mayank Shrivastava. "Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution." IEEE Transactions on Electron Devices 69, no. 4 (2022): 1956-1963. DOI: 10.1109/TED.2022.3152459
  17. Jeevesh Kumar, Ansh, and Mayank Shrivastava. “Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight.” ACS omega 6, no. 8 (2021): 5619-5626. DOI:10.1021/acsomega.0c06058
  18. Mishra, Abhishek, Adil Meersha, N. K. Kranthi, Jeevesh Kumar, NS Veenadhari Bellamkonda, Harsha B. Variar, and Mayank Shrivastava. "Unified Mechanism for Graphene FET’s Electrothermal Breakdown and Its Implications on Safe Operating Limits." IEEE Transactions on Electron Devices 68, no. 5 (2021): 2530-2537. DOI: 10.1109/TED.2021.3068081
  19. Jeevesh Kumar, Ansh, and Mayank Shrivastava. “Stone–Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions Between Graphene and Ambient Gases: A First-Principles Insight.” ACS omega 5, no. 48 (2020): 31281-31288. DOI:10.1021/acsomega.0c04729
  20. Ansh, Jeevesh Kumar, Gaurav Sheoran and Mayank Shrivastava, “Electrothermal Transport Induced Material Re-Configuration and Performance Degradation of CVD-Grown Monolayer MoS2 Transistors”, npj 2D Mater Appl 4, 37 (2020). DOI: 10.1038/s41699-020-00171-3
  21. Shankar Bhawani, Swati Shikha, Anant Singh, Jeevesh Kumar, Ankit Soni, Sayak Dutta Gupta, Srinivasan Raghavan, and Mayank Shrivastava. "Time Dependent Shift in SOA Boundary and Early Breakdown of EpiStack in AlGaN/GaN HEMTs Under Fast Cyclic Transient Stress." IEEE Transactions on Device and Materials Reliability 20, no. 3 (2020): 562-569. DOI: 10.1109/TDMR.2020.3007128
  22. Andrew E. Naclerio, Dmitri N. Zakharov, Jeevesh Kumar, Bridget Rogers, Cary L. Pint, Mayank Shrivastava, and Piran R. Kidambi “Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy”ACS Applied Materials & Interfaces 2020 12 (13), 15844-15854. DOI: 10.1021/acsami.9b21116
  23. Ansh, Jeevesh Kumar, Gaurav Sheoran, Harsha B. Variar, Ravikesh Mishra, Hemanjaneyulu Kuruva, Adil Meersha, Abhishek Mishra, Srinivasan Raghavan, and Mayank Shrivastava. "Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD–Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs." IEEE Transactions on Electron Devices 67, no. 2 (2020): 717-724.  DOI: 10.1109/TED.2019.2958338
  24. Ansh, Jeevesh Kumar, Gaurav Sheoran, Ravikesh Mishra, Srinivasan Raghavan, and Mayank Shrivastava. "Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by SulfurAssisted Metal-Induced Gap State Engineering." IEEE Transactions on Electron Devices 67, no. 1 (2019):383-388 . DOI: 10.1109/TED.2019.2956781  (SCI)
  25. Hemanjaneyulu Kuruva, Jeevesh Kumar, and Mayank Shrivastava. "MoS2 doping using potassium iodide for reliable contacts and efficient FET operation." IEEE Transactions on Electron Devices 66, no. 7 (2019): 3224-3228. DOI: 10.1109/TED.2019.2916716
  26. Sayak Dutta Gupta, Ankit Soni, Vipin Joshi, Jeevesh Kumar, Rudrarup Sengupta, Heena Khand, Bhawani Shankar, Nagaboopathy Mohan, Srinivasan Raghavan, Navakanta Bhat, and Mayank Shrivastava "Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering." IEEE Transactions on Electron Devices 66, no. 6 (2019): 2544-2550. DOI: 10.1109/TED.2019.2908960

Papers in conference abstract volumes / presented

  1. Jeevesh Kumar, Aadil Bashir Dar, Asif A. Shah, K. M. Amogh, Sumana Chattaraj, Utpreksh Patbhaje, Anand K. Rai, Rupali Verma, and Mayank Shrivastava. "Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders." In 2024 IEEE International Reliability Physics Symposium (IRPS), pp. 1-5. IEEE, 2024. DOI: 10.1109/IRPS48228.2024.10529372
  2. Patbhaje, Utpreksh, Rupali Verma, Jeevesh Kumar, Aadil Bashir Dar, and Mayank Shrivastava. "Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS 2 FETs." In 2024 IEEE International Reliability Physics Symposium (IRPS), pp. 1-7. IEEE, 2024. DOI: 10.1109/IRPS48228.2024.10529415
  3. Verma, Rupali, Utpreksh Patbhaje, Asif Altaf Shah, Jeevesh Kumar, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, and Mayank Shrivastava. "Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs." In 2024 IEEE International Reliability Physics Symposium (IRPS), pp. P74-TX. IEEE, 2024. DOI: 10.1109/IRPS48228.2024.10529469
  4. Shah, Asif A., Rupali Verma, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Jeevcsh Kumar, Anand Kumar Rai, Sumana Chattaraj, and Mayank Shrivastava. "Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs." In 2024 IEEE International Reliability Physics Symposium (IRPS), pp. 01-04. IEEE, 2024. DOI: 10.1109/IRPS48228.2024.10529444
  5. Jeevesh Kumar, Hemanjaneyulu, Kuruva, Harsha B. Variar, Utpreksh Patbhaje, and Mayank Shrivastava. “Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices.” In 2023 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6. IEEE, 2023. DOI: 10.1109/IRPS48203.2023.10118245
  6. Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Ansh, and Mayank Shrivastava, "Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs", In 2023 IEEE International Reliability Physics Symposium (IRPS), pp. 1-6. IEEE, 2023. DOI: 10.1109/IRPS48203.2023.10117743
  7. Rupali Verma, Utpreksh Patbhaje, Jeevesh Kumar, Anand Kumar Rai, and Mayank Shrivastava, "OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-illuminated state ", In 2023 IEEE International Reliability Physics Symposium (IRPS), pp. 1-5. IEEE, 2023. DOI: 10.1109/IRPS48203.2023.10117978
  8. Asif A. Shah, Jeevesh Kumar, Aadil Bashir Dar and Mayank Shrivastava, "Unveiling Root Cause of Defect Assisted Filamentation and Implication on Resistive Switching in MoS2 Atomristor”, In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1-3. IEEE, 2023. DOI: 10.1109/EDTM55494.2023.10102955
  9. Jeevesh Kumar, Utpreksh Patbhaje, and Mayank Shrivastava. “Unveiling Additional Ambient Degradation Issues of Phosphorene FETs under Laser Exposer and Positive Gate Bias”. In 2022 IEEE International Conference on Emerging Electronics (ICEE), pp. 1-4. IEEE, 2022. DOI: 10.1109/ICEE56203.2022.10118342
  10. Jeevesh Kumar, and Mayank Shrivastava. “Are Argon and Nitrogen Gases Really Inert to Graphene Devices?” In 2022 Device Research Conference (DRC), pp. 1-2. IEEE, 2022. DOI: 10.1109/DRC55272.2022.9855822.
  11. Jeevesh Kumar, Ansh, Hemanjaneyulu Kuruva, and Mayank Shrivastava. “Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight.” In 2020 Device Research Conference (DRC), pp. 1-2. IEEE, 2020. DOI: 10.1109/DRC50226.2020.9135158
  12. Jeevesh Kumar, Asha Yadav, Anant Singh, Andrew Naclerio, Dmitri Zakharov, Piran Kidambi, and Mayank Shrivastava. “Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress.” In 2020 IEEE International Reliability Physics Symposium (IRPS), pp. 1-4. IEEE, 2020. DOI: 10.1109/IRPS45951.2020.9129123
  13. Ansh, Ansh, Gaurav Sheoran, Jeevesh Kumar, and Mayank Shrivastava. "First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel." In 2020 IEEE International Reliability Physics Symposium (IRPS), pp. 1-4. IEEE, 2020. DOI: 10.1109/IRPS45951.2020.9129173
  14. Jeevesh Kumar, Adil Meersha, and Mayank Shrivastava. “A First Principle Insight into Defect Assisted Contact Engineering at the Metal-Graphene and Metal-Phosphorene Interfaces.” In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 1-4. IEEE, 2019. DOI: 10.1109/SISPAD.2019.8870396

Patents

S.No.

Patent Title

Name of Applicant(s)

Patent No.

Award Date

Agency/Country

Status

1

A Graphene based fast heat spreader for electronic

applications

Jeevesh Kumar, Aadil Bashir Dar, Mayank Shrivastava

573868

17/11/2025

India

Granted

Projects & Activities

Consultancy Project

Sl.

No.

Name of all PI/Co-PI etc

Sponsoring Authority/ Institute                         project No.

Topic/ Field

Sanctioned Amount(Rs.)

1

Dr. Jeevesh Kumar

GIAN, MoE

GIAN Course on “2D Materials of Emerging Electronics”

6,64,000.00

1.

Dr. Jeevesh Kumar and Dr. Jitendra Kumar

MMTTP, MoE

 

Refresher Course on “Atom to Device Understanding of Emerging Semiconductor Technology”

2,70,600.00

Membership of Scientific Societies

  • IEEE
  • IEI

Other Academic and Administrative Activities

Invited/Training/Workshop Talks:

1. "Vacancy-assisted Contact Resistance and Bandgap Engineering in Graphene Devices.", ICEE 2025, December 2025, Bangalore, India.

2. Vacancy Assisted Contact Resistance Engineering in Monolayer and Bilayer Graphene Devices, EDTM 2024, March 2024, Bangalore, India

3. Talks on "Sensors and Embedded Systems" in following drone Bootcamps:

  • Asam Riffles, Manipur on 02/12/2025
  • SIET UP on 14/10/2025
  • IIIT Manipur on 19/07/2025
  • Deepatoli Army Cant Ranchi on 03/07/2025

 

 

FDP/GIAN/Workshop Organised:

  • 5-day GIAN Couse on "2D Materials for Emerging Electronics", During 03-07 November 2025
  • 12-day Refresher Course on "Atom to Device Understanding of Emerging Semiconductor Technology", During 24 February to 07 March 2025

 

 

 

 

 

Guidance

Utkarsh K. Mahi (In Progress)

Yamala H. V. Naidu (In Progress)

Gauri Kumari (In Progress)

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